Direct SiO2/β-SiC(100)3×2 interface formation from 25 °C to 500 °C
- 8 April 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (15) , 2144-2146
- https://doi.org/10.1063/1.115612
Abstract
We investigate the β‐SiC(100)3×2 surface oxidation by core level and valence band photoemission spectroscopies using synchrotron radiation. Low molecular O2 exposures on the (3×2) surface reconstruction leads to direct SiO2/β‐SiC(100)3×2 interface formation already at room temperature (RT). To our best knowledge, this is the first example of RT oxidation leading directly to dominant silicon dioxide growth by O2 chemisorption only. The amount of SiO2 is enhanced when the surface temperature is raised by few hundred degrees only (2 exposures leading to ‘‘bulk oxide’’ formation already at small thicknesses. These findings are also relevant in low‐temperature semiconductor oxide processing.Keywords
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