SiC amorphlzation as a result of Ga+ implantation
- 1 June 1988
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 33 (1-4) , 788-791
- https://doi.org/10.1016/0168-583x(88)90683-0
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Damage accumulation in ceramics during ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Long-range recoil extension of high energy heavy ion damage in ceramicsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Mechanism for dynamic annealing during high flux ion irradiation in SiApplied Physics Letters, 1984
- Structural alterations in SiC as a result of Cr+ and N+ implantationNuclear Instruments and Methods in Physics Research, 1983
- Disorder produced in SiC by ion bombardmentRadiation Effects, 1971