Plasma phase polymerization reactions in the deposition of glow discharge deposited a-Ge:H alloy films

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Abstract
Films of a‐Ge:H deposited from low power rf plasmas of GeH4 and H2‐diluted GeH4 at substrate temperatures Ts=100 to 400 °C have been characterized by IR spectrometry to determine the levels of Ge monohydride and polyhydride bonding. Correlation of the changes in hydrogen bonding and deposition rate for these and previously studied a‐Ge:H films with the plasma phase deposition parameters (power density and degree of dilution) and the Ts parameter leads to a general model of H incorporation which involves both plasma phase and surface reactions. Plasma reactions can generate either monomeric or polymeric reactive species. These species then undergo thermally activated surface reactions which further determine the degree of hydrogen elimination and subsequent incorporation as monohydride or polyhydride.