The Crystal Growth of Boron Monophosphide from Metal Phosphide Solutions

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Abstract
The crystal growth of boron phosphide, BP, has been investigated using two approaches: (i) the addition of phosphorus to a boron‐nickel or boron‐copper melt, and (ii) the recrystallization of boron phosphide from a nickel phosphide or copper phosphide solution in a temperature gradient. To determine the optimum conditions for the growth processes, the solubility of boron phosphide in nickel phosphide and copper subphosphide was determined over a wide temperature range. The solubility of boron phosphide in nickel phosphide was found to be higher than that in copper phosphide. Boron phosphide crystals of about 3‐mm size were obtained by the addition of phosphorus to a boron‐nickel or boron‐copper melt at 1300°C or above, followed by slow cooling. The temperature gradient recrystallization of boron phosphide from nickel phosphide at 1200°C has produced larger crystals. The solution‐grown crystals were in the form of hoppers and platelets with platelets dominating. The platelets had main faces of {111} orientation and were formed by the twin‐plane re‐entrant‐edge mechanism. The solution‐grown crystals are usually n‐type with a room temperature resistivity of about 0.5 ohm‐cm and a dopant concentration of about 1018 cm−3. They have been used successfully as substrates for the epitaxial growth of boron phosphide.

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