Local-Field Effects in the Screening of Impurities in Silicon
- 14 May 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 42 (20) , 1365-1368
- https://doi.org/10.1103/physrevlett.42.1365
Abstract
A model inverse dielectric matrix is used to calculate the electronic response to impurity potentials in silicon. We show that local-field effects are strong on the scale of interatomic distances and that they give rise to relevant quantitative effects on the binding energies and wave functions of both deep and shallow impurities.Keywords
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