Cross Substitution in InAs

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Abstract
The paper considers cross‐substitutional alloys of produced by replacing As by combinations of (Ge,Te), (Sn,Te), or (Ge,Se) so as to keep the ratio of valence electrons to lattice sites equal to four. Limits of solid solution have been determined by x‐ray and photomicrograph techniques. All the alloys so produced are degenerate n‐type semiconductors of very high carrier concentrations. Values of carrier density and optical energy gap have been determined as a function of composition and the results extrapolated to give data for the conduction band minima of InAs. It is found that at room temperature the 〈111〉 minima lie at 0.9 ev above the valence band maximum and that the (000) minimum will accept approximately before an appreciable number of electrons enter the 〈111〉 minima.

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