A direct, reliable, measurement-based technique for the extraction of an on-chip HBT dummy structure equivalent circuit
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A reliable measurement-based technique is introduced to extract dummy structure modeling parameters which are used to deembed the intrinsic S-parameters of an on-chip heterojunction bipolar transistor (HBT) device. The entire parameter set of the dummy structure equivalent circuit is obtained by direct processing of the measurement data. This avoids the need for computer optimization which often produces unrealistic results. An example is given to demonstrate the method, and the structure model is applied to reveal the intrinsic device S-parameters of an HBT.Keywords
This publication has 3 references indexed in Scilit:
- Parameter extraction technique for HBT equivalent circuit using cutoff mode measurementIEEE Transactions on Microwave Theory and Techniques, 1992
- Extraction of the parameters of equivalent circuits of microwave transistors using tree annealingIEEE Transactions on Microwave Theory and Techniques, 1990
- GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for applicationIEEE Transactions on Electron Devices, 1989