Low threshold GaAs/GaAlAs BH lasers with ion-beam-etched mirrors
- 20 June 1985
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 21 (13) , 566-568
- https://doi.org/10.1049/el:19850400
Abstract
We report the use of the ion-beam etching (IBE) technique to produce GaAs/GaAlAs BH lasers with one etched and one cleaved mirror facet. Low threshold currents of 12 mA have been measured in devices with 100 μm-long cavities.Keywords
This publication has 0 references indexed in Scilit: