Photoluminescence, Thermal Transport, and Breakdown in Joule-Heated GaN Nanowires
- 17 December 2008
- journal article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 9 (1) , 257-263
- https://doi.org/10.1021/nl802840w
Abstract
Thermal transport and breakdown in Joule-heated GaN nanowires is investigated using a combination of microphotoluminescence and in situ TEM characterization. The thermal conductivity of the nanowires is estimated to be <80 W/m·K, which is substantially below the bulk GaN value. Catastrophic breakdown in individual nanowires is observed to occur at a maximum temperature of approximately 1000 K, and nanowire morphology near the breakdown region indicates that failure occurs via thermal decomposition, a conclusion that is validated by in situ TEM images obtained during the failure process.Keywords
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