Two-dimensional dopant profiling of submicron metal–oxide–semiconductor field-effect transistor using nonlinear least squares inverse modeling
- 1 January 1996
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 14 (1) , 224-230
- https://doi.org/10.1116/1.589033
Abstract
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