Transmission electron microscope study of arsenic precipitates in GaAs: Morphology and orientation relationship with the matrix
- 1 June 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 96 (2) , 333-338
- https://doi.org/10.1016/0022-0248(89)90530-7
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Evidence of the origin of infrared scattering in GaAs with high-resolution infrared tomographyJournal of Applied Physics, 1987
- Infrared laser scanning microscopy in transmission: A new high-resolution technique for the study of inhomogeneities in bulk GaAsApplied Physics Letters, 1987
- Arsenic precipitation at dislocations in GaAs substrate materialJournal of Applied Physics, 1980
- Revised calculation of point defect equilibria and non-stoichiometry in gallium arsenideJournal of Physics and Chemistry of Solids, 1979