CMOS/SIMOX devices having a radiation hardness of 2 Mrad(Si)

12 February 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (4) , 141-143
https://doi.org/10.1049/el:19870099

Abstract

Radiation-hardened CMOS/SIMOX devices have been produced by combining SIMOX with a newly developed lateral isolation structure. Even after exposure of these devices up to 2 Mrad(Si) of gamma-ray irradiation, they exhibit sufficient operational characteristics.

Keywords

OPERATIONAL CHARACTERISTICS
CMOS/SIMOX DEVICES
RADIATION HARDNESS
MOSFET
GAMMA-RAY IRRADIATION
LATERAL ISOLATION STRUCTURE
2E6 RAD

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