A Novel Process to Form Epitaxial Si Structures With Buried Silicide
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Calorimetric evidence for structural relaxation in amorphous siliconPhysical Review Letters, 1989
- Variable strain energy in amorphous siliconJournal of Materials Research, 1988
- Lattice imaging of silicide-silicon interfacesThin Solid Films, 1982
- Epitaxial silicidesThin Solid Films, 1982
- Transition temperatures and heats of crystallization of amorphous Ge, Si, and Ge1−xSix alloys determined by scanning calorimetryJournal of Applied Physics, 1981