Phonon spectra of diamond and zinc-blende semiconductors
- 15 June 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 31 (12) , 7865-7876
- https://doi.org/10.1103/physrevb.31.7865
Abstract
We model the phonon spectra of the diamond-structure compounds C, Si, Ge, Sn and the zinc-blende-structure compounds GaP, GaAs, and ZnS. We use a four-parameter valence-force model consisting of first- and second-neighbor forces plus the very important coplanar angle-angle interaction introduced by McMurry et al. Although formally ‘‘fifth neighbor,’’ this interaction follows bond stretching and bond bending in importance. In agreement with the remarkable spread of screening charge along 〈110〉 bond chains this interaction highlights the physical importance of these chains. Two-parameter fits to the spectra are quite successful using only bond bending and bond stretching but with much smaller values of bond bending than found by Martin, who fitted the elastic constants. In zinc-blende compounds two bond-stretching parameters are available corresponding to the two distinct vertex atoms. The extra degree of freedom gives little improvement and produces such wildly different values as to call into question the degree of localization implied by the intuitive picture of bond bending. We introduce long-range Coulomb interactions through a ‘‘bond-tilt’’ model yielding dipole-dipole and quadrupole-quadrupole interactions. These interactions further improve the fits given by the valence-force model, yielding an LO-TO splitting for the zinc-blende compounds. The interactions are manifestly rotationally invariant, satisfying a serious question raised by an earlier model due to Lax. Our models give a different perspective on the physics of covalent phonon spectra which we feel is complementary to the bond-charge models of Martin and Weber. The accuracy of our best fits is comparable.Keywords
This publication has 20 references indexed in Scilit:
- Theory of static structural properties, crystal stability, and phase transformations: Application to Si and GePhysical Review B, 1982
- Theory of lattice-dynamical properties of solids: Application to Si and GePhysical Review B, 1982
- Ab InitioForce Constants of GaAs: A New Approach to Calculation of Phonons and Dielectric PropertiesPhysical Review Letters, 1982
- Theory of the silicon vacancy: An Anderson negative-systemPhysical Review B, 1980
- Phonon Dispersion Relations in InsulatorsPublished by Springer Nature ,1979
- Adiabatic bond charge model for the phonons in diamond, Si, Ge, andPhysical Review B, 1977
- Valence force potentials for calculating crystal vibrations in siliconJournal of Physics and Chemistry of Solids, 1971
- Dielectric Screening Model for Lattice Vibrations of Diamond-Structure CrystalsPhysical Review B, 1969
- The use of valence force potentials in calculating crystal vibrationsJournal of Physics and Chemistry of Solids, 1967
- Quadrupole Interactions and the Vibration Spectra of Diamond Type CrystalsPhysical Review Letters, 1958