ANNEALING OF LPE GARNET FILMS
- 1 January 1972
- proceedings article
- Published by AIP Publishing in AIP Conference Proceedings
- Vol. 5 (1) , 115-119
- https://doi.org/10.1063/1.3699405
Abstract
Ga:YIG films which have partial replacements of Y by Gd or Eu, and which were grown on (111) and (100) Gd3Ga5O12 substrates near 900°C by liquid phase epitaxy, show annealing effects in air and oxygen between 800 and 1200°C. The uniaxial anisotropy has a nearly linear variation with the film‐substrate lattice mismatch, indicating a stress‐induced anisotropy. The magnetic moment, coercivity, domain mobility, and optical absorption changes which occur as a result of annealing are also noted in this temperature range.Keywords
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