Deuterium interactions with ion-implanted oxygen in aluminum

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Abstract
The trapping of deuterium (D) by ion‐implanted oxygen in aluminum was characterized through temperature‐ramp experiments which utilized nuclear‐reaction profiling. In the presence of γ‐Al2O3 precipitates produced by post‐implantation annealing at 823 K, two trapping processes were identified: the first, with a binding enthalpy of 0.7 eV relative to D in solution, is attributed to the formation of molecular D2 at the precipitate boundaries; the second process, which exhibits a range of binding enthalpies above 1 eV, is believed to reflect the formation of chemical bonds at oxide defects. These two trapping effects were also observed in the absence of precipitation annealing, but with different saturation concentrations; their occurrence here may reflect O clustering during the room‐temperature implantation of O. It is argued that the trapping mechanisms identified in this work may be widely encountered in metals and alloys containing O, with potentially important technological consequences.

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