Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region
- 30 November 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (11) , 1101-1103
- https://doi.org/10.1016/0038-1101(85)90190-x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Bipolar transistor with graded band-gap baseElectronics Letters, 1983
- Numerical simulation of GaAs/GaAlAs heterojunction bipolar transistorsIEEE Electron Device Letters, 1982
- An Integral Charge Control Model of Bipolar TransistorsBell System Technical Journal, 1970
- A Charge Control Relation for Bipolar TransistorsBell System Technical Journal, 1970