High performance, MOS EPROMs using a stacked-gate cell

Publisher Website

1 January 1977

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 186-187
https://doi.org/10.1109/isscc.1977.1155707

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Famos—A new semiconductor charge storage device
Solid-State Electronics, 1974
A fully-decoded 2048-bit electrically-programmable MOS ROM
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1971