Distribution of built-in electrical potential in GaInP2/GaAs tandem-junction solar cells
- 19 August 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (8) , 1572-1574
- https://doi.org/10.1063/1.1602575
Abstract
Distributions of built-in potential in tandem-junction solar cells were investigated by scanning Kelvin probe microscopy. Two states of potential distribution resulting from flattening of band bending and charge accumulation on either the top or bottom junction were observed under short circuit, depending on the illumination spectra. With an external bias voltage, the voltage change always happened on the junction with the charge accumulation, and the potential distribution between the two states became less sensitive to illumination spectra.
Keywords
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