Design data for millimeter wave coplanar circuits

Abstract
Theoretical and experimental data for the characterization and design of coplanar lines for millimeter wave ICs is presented for the substrates gallium arsenide (GaAs), indium phosphide (InP) and quartz. The theoretical data is based on the simplified model of Heinrich [1]. The experimental data was obtained by on-wafer S-parameter measurements up to 60 GHz on coplanar lines of different dimensions, and subsequent modeling and data extraction. Excellent agreement has been observed between theory and experiment.

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