A general four-terminal charging-current model for the insulated-gate field-effect transistor—I
- 31 May 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (5) , 405-410
- https://doi.org/10.1016/0038-1101(80)90074-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- A nonlinear indefinite admittance matrix for modeling electronic devicesIEEE Transactions on Electron Devices, 1977
- A new approach to the theory and modeling of insulated-gate field-effect transistorsIEEE Transactions on Electron Devices, 1977
- MOS-device modeling for computer implementationIEEE Transactions on Circuit Theory, 1973
- Unified modeling of field-effect devicesIEEE Journal of Solid-State Circuits, 1971
- A systematic modeling theory for solid state devicesSolid-State Electronics, 1964