Theory of exciton linewidth in II–VI semiconductor mixed crystals
- 1 April 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 101 (1-4) , 346-349
- https://doi.org/10.1016/0022-0248(90)90993-u
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Excitonic energies and inhomogeneous line broadening effects in InAlAs/InGaAs modulator structuresJournal of Applied Physics, 1987
- Quantum mechanical theory of linewidths of localized radiative transitions in semiconductor alloysApplied Physics Letters, 1986
- Compositional Disorder‐Induced Broadening for Free Excitons in II‐VI Semiconducting Mixed CrystalsPhysica Status Solidi (b), 1978
- The energy spectrum of disordered systemsAdvances in Physics, 1964