On the accuracy of the theoretical high-frequency semiconductor capacitance for inverted MOS structures
- 1 January 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 21 (1) , 122-125
- https://doi.org/10.1109/t-ed.1974.17873
Abstract
The accuracy of the usual expression of the high-frequency semiconductor capacitance is investigated by means of a charge-analysis model which takes into account the minority carrier rearrangement within the inversion layer due to the ac signal. In the range of doping concentrations of practical interest, it is found that the errors never exceed 5 percent, even in the strong inversion region.Keywords
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