Ion assisted growth of diamond

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Abstract
Diamond crystallites up to 40 nm in size have been grown from a highly ionized plasmabeam of acetylene for ion energies close to 100 eV per C atom and substrate temperatures above 450 °C. This shows that diamond can be grown by physical vapor deposition from an ion‐rich plasma as well as by chemical vapor deposition from a radical‐rich plasma. The formation mechanism is argued to be one of nucleation and growth rather than a stress induced transformation from graphite.

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