Development of a new MBE growth method for fabrication of high quality, double epitaxial Si/γ-Al2O3/Si structures
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 500-504
- https://doi.org/10.1016/0022-0248(89)90452-1
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Vapor Phase Epitaxial Growth of MgO · Al2 O 3Journal of the Electrochemical Society, 1982
- Growth of thin silicon films on sapphire and spinel by molecular beam epitaxyApplied Physics Letters, 1980