Hydrogenation effects in sputtered polycrystalline cadmium telluride
- 15 May 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (10) , 3702-3705
- https://doi.org/10.1063/1.332922
Abstract
The hydrogenation of rf sputtered thin film polycrystalline CdTe is reported. Hydrogenation is achieved by reactive sputtering in an argon and hydrogen mixture. Results include an order of magnitude decrease in conductivity, an increase and sign change in band bending for Au-CdTe junctions, and a significant increase in the anomalous photovoltaic effect (APE). APE coplanar voltages increase from approximately 10 V/cm without hydrogen to a maximum of 350 V/cm with hydrogenation. The results are interpreted in terms of increased band bending at crystallite surfaces and interfaces due to hydrogenation. These results support a previously proposed mechanism for the APE due to surface photovoltages in inclined crystallites.This publication has 15 references indexed in Scilit:
- The photovoltaic effect in GaSb filmsThin Solid Films, 1981
- Passivation of grain boundaries in polycrystalline siliconApplied Physics Letters, 1979
- Chemical composition and structure of cathode- sputtered CdTe thin filmsThin Solid Films, 1978
- The physical properties of cadmium tellurideRevue de Physique Appliquée, 1977
- Structure and properties of sputter-deposited CdTeRevue de Physique Appliquée, 1977
- Materials for solar photocells :Place of CdTeRevue de Physique Appliquée, 1977
- High Photovoltages in Silicon and Silicon Carbide Films and Their Origin from a Trap-Induced Space ChargeJournal of Applied Physics, 1964
- Photovoltages Larger than the Band Gap in Zinc Sulfide CrystalsPhysical Review B, 1958
- High-Voltage Photovoltaic EffectPhysical Review B, 1958
- Photovoltaic Effects Exhibited in High-resistance Semi-conducting FilmsNature, 1946