Heteroepitaxy between layered semiconductors GaSe and InSe
- 1 January 1990
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 41-42, 539-543
- https://doi.org/10.1016/0169-4332(89)90118-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Epitaxial growth ofon Si: A direct Monte Carlo simulationPhysical Review B, 1988
- Low-energy electron-loss spectroscopy of GaSe and InSePhysical Review B, 1986
- Summary Abstract: Fabrication of ultrathin heterostructures with van der Waals epitaxyJournal of Vacuum Science & Technology B, 1985
- Electron scattering mechanisms in-type indium selenidePhysical Review B, 1984
- Kinetics of radiative recombinations in GaSe and influence of Cu doping on the luminescence spectraPhysical Review B, 1983