Electron-beam programmable 128K-bit wafer-scale EPROM

1 May 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 4 (5) , 153-155
https://doi.org/10.1109/EDL.1983.25684

Abstract

The feasibility of using an electron beam to customize and repair a wafer-scale n MOS system has been demonstrated. As the test vehicle, a 128K-bit EPROM was fabricated. All data bits and address decoders incorporate floating-gate FET's, which act as links which can be turned on or off under electron-beam control. Each link can be programmed on 0.4 ms, and once programmed exhibits excellent nonvolatility. Because of the small link size, high programming speed, absence of debris, and ability to program without disturbing the integrity of the passivation, electron-beam programmable links may provide an attractive alternative to laser or fusible link repair and customization techniques.

Keywords

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