- 1 January 1978
- journal article
- Published by Elsevier
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- 2.2 Substrate surface damages by rf-sputteringVacuum, 1977
- Electron-irradiation-induced divacancy in lightly doped siliconJournal of Applied Physics, 1976
- The effects of sputtering damage on the characteristics of molybdenum-silicon Schottky barrier diodesSolid-State Electronics, 1976
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Silicon Schottky Barrier Diode with Near-Ideal I-V CharacteristicsBell System Technical Journal, 1968
- Production of Divacancies and Vacancies by Electron Irradiation of SiliconPhysical Review B, 1965