Electrical Characterization of Metal Contacts on Diamond Thin Films
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Characterization of Boron-Doped Diamond FilmJapanese Journal of Applied Physics, 1989
- The barrier height of Schottky diodes with a chemical-vapor-deposited diamond baseJournal of Applied Physics, 1989
- Fermi-Dirac statistics and the nature of the compensating donors in boron-doped diamond layersPhysical Review B, 1989
- Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond filmsApplied Physics Letters, 1988
- High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamondIEEE Electron Device Letters, 1987
- Ion-beam-assisted etching of diamondJournal of Vacuum Science & Technology B, 1985
- Effective p-type doping of diamond by boron ion implantationJournal of Applied Physics, 1983
- Bipolar transistor action in ion implanted diamondApplied Physics Letters, 1982
- The C-V characteristics of Schottky barriers on laboratory grown semiconducting diamondsSolid-State Electronics, 1973
- Capacitance Energy Level Spectroscopy of Deep-Lying Semiconductor Impurities Using Schottky BarriersJournal of Applied Physics, 1970