Electronic structure of the oxide-diluted magnetic semiconductorZn1xMnxO

Abstract
We have studied the electronic structure of Zn1xMnxO using photoemission spectroscopy measurements and configuration-interaction (CI) calculations on a MnO4 cluster model. It is shown that the CI calculation can give a consistent description of the photoemission and dd optical absorption spectra of Zn1xMnxO as well as those of other II-VI- and III-V-based diluted magnetic semiconductors such as Cd1xMnxTe and Ga1xMnxAs. The CI approach predicts that the magnitude of the pd exchange constant in Zn1xMnxO is much larger than that in Ga1xMnxAs.