Tunneling between totally quantized levels in GaAs/AlGaAs asymmetric triple-barrier heterostructures in high magnetic fields

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Abstract
Electron transport is studied in GaAs/AlGaAs asymmetric triple‐barrier resonant tunneling structures in a high magnetic field perpendicular to the interfaces. Besides the resonance peaks arising from tunneling between two quantum wells, a series of fine structure is observed in the valley region of the current‐voltage characteristics, which is attributed to electron transitions between well defined totally quantized levels (Landau levels) in the two wells, together with the emission of a longitudinal optical phonon. In the voltage region of the main current peak, any structures which shift with magnetic field are not observed, suggesting that the tunneling in this bias region is mainly determined by Δn=0 elastic transitions.