Observation of an ordered structure in the initial stage of Ge/Si heteroepitaxial growth
- 3 December 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (23) , 2434-2436
- https://doi.org/10.1063/1.103868
Abstract
An ordered structure with the double periodicity in a 〈111〉 direction has been found by in situ reflection high‐energy electron diffraction observation in the initial stage of Ge films grown on (100)Si and (811)Si substrate surfaces by GeH4 gas source molecular beam epitaxy. The ordered structure is formed on {111} planes parallel to the side planes of 〈011〉 steps on {811} facets of Ge growing islands on both substrates. The formation is observed at substrate temperatures of 300–700 °C and is considered to result from solid phase reactions at the interfaces during growth.Keywords
This publication has 10 references indexed in Scilit:
- Growth processes in the initial stage of Ge films on (811)Si surfaces by GeH4 source molecular beam epitaxyJournal of Applied Physics, 1990
- Growth processes in the initial stages of deposition of Ge films on (100) Si surfaces by GeH4 source molecular beam epitaxyJournal of Crystal Growth, 1990
- Structural phenomena in coherent epitaxial solidsJournal of Crystal Growth, 1989
- Growth mechanism and clustering phenomena: The Ge-on-Si systemPhysical Review B, 1989
- Initial Stage of Growth of Ge on (100)Si by Gas Source Molecular Beam Epitaxy Using GeH4Japanese Journal of Applied Physics, 1989
- Ordering in GaAs1−xSbx grown by molecular beam epitaxyApplied Physics Letters, 1987
- Structurally induced optical transitions in Ge-Si superlatticesPhysical Review Letters, 1987
- Observation of Order-Disorder Transitions in Strained-Semiconductor SystemsPhysical Review Letters, 1985
- The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7)Surface Science, 1985
- Immiscibility and spinodal decomposition in III/V alloysJournal of Crystal Growth, 1983