Characterization of isothermal vapor phase epitaxial (Hg,Cd)Te

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Abstract
We report on the characterization of mercury cadmium telluride (Hg1−xCdxTe) film grown by the isothermal vapor phase epitaxial method (ISOVPE) and on the surface conversion of bulk Hg1−xCdxTe to larger bandgap material. The crystal perfection is evaluated using defect etching, electron beam and electrolyte electroreflectance (EBER and EER), and Rutherford backscattering spectrometry (RBS). Hall measurements are used to measure carrier densities and mobilities. Surface concentrations and concentration profiles are measured for the ISOVPE grown layers by transmission Fourier transform infrared spectroscopy (FTIR) and electron-probe microanalysis (EPMA) to establish quantitative informations about composition control. Metal–insulator-semiconductor (MIS) structures were made and the properties important to device performance such as compositional uniformity, storage time, and carrier concentration are measured. The ISOVPE layers are compared in quality to films grown by other methods and show promise for MIS devices.

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