Near Infrared Photoacoustic Spectra of Deep Levels in GaAs Grown by Liquid Encapsulated Czochralski Method

1 January 1992

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 31 (S1) , 20
https://doi.org/10.7567/jjaps.31s1.20

Abstract

Piezoelectric photoacoustic measurements on semi-insulating (SI) and n-type GaAs were carried out at 90 K. A distinctive peak at 0.92 eV and a hump near 1.2 eV have been observed for the SI samples. By comparing with the optical absorption and the electron photoionization cross section spectra, it is considered that these features are due to the electron transition involving deep EL2 defect levels. The present experimental results show that the PA spectroscopic technique is a novel and a useful tool to characterize the deep levels in semiconductors.

Keywords

PHOTOACOUSTIC
GAAS
DEEP
PIEZOELECTRIC
DEFECT
EXPERIMENTAL
ENCAPSULATED
HUMP
SPECTROSCOPIC

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