IMMA applications to ion implantation in silicon-on-sapphire
- 1 December 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (12) , 2256-2261
- https://doi.org/10.1109/t-ed.1980.20261
Abstract
Application of ion-microprobe mass analysis (IMMA) technique for the characterization of the silicon-on-sapphire (SOS) epitaxial layers and ion implantation in SOS axe described. A significantly high level of aluminum and oxygen concentration was observed in the thin (O.5-µm) epitaxial film. Ion-implant profiles of boron and phosphorus before and after high-temperature activation and oxidation procedures commonly used in SOS fabrication process are characterized and correlated to SUPREM calculations, spreading resistance, and resistivity measurements.Keywords
This publication has 0 references indexed in Scilit: