Frequency‐Resolved Admittance Measurements on InAlAs / InGaAs / InAlAs Single‐Quantum Wells to Determine the Conduction Band Offset and the Capture Coefficient

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Abstract
Frequency‐resolved admittance measurements have been used to determine the conduction band offset and the capture time constant of single‐quantum well (SQW) structures. A theoretical analysis of the SQW admittance taking into account nonparabolicity of the conduction band is reported. Analytical expressions for both capacitance and conductance as a function of both bias and frequency have been deduced and used to fit the experimental data. As a result the conduction band offset and the capture time constant have been obtained. Two different well compositions, lattice‐matched and strained, have been studied. In both cases the well width was 5 nm. The obtained conduction band offset at room temperature is for and for . The capture coefficient of the carriers in the first subband in the well is in the range for and in the range for .

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