Advanced F 2 lasers for microlithography
- 5 July 2000
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- p. 1515-1528
- https://doi.org/10.1117/12.388991
Abstract
According to the SIA-Roadmap, the 157 nm wavelength of the F2 laser emission will be used for chip production with critical dimensions of 100 nm down tot eh 70 nm node. Currently al basic technologies for 157 nm lithography are under investigation and development at material suppliers, coating manufacturers, laser suppliers, lens and tool manufacturers, mask houses, pellicle manufacturers, and resist suppliers.Keywords
This publication has 0 references indexed in Scilit: