Insulated-gate and junction-gate FET's of CVD-Grown β-SiC
- 1 February 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 8 (2) , 48-49
- https://doi.org/10.1109/edl.1987.26547
Abstract
An insulated-gate field effect transistor (IGFET) and a junction-gate FET (JFET) of cubic silicon carbide (β-SiC) have been fabricated using chemical vapor deposition (CVD) growth on Si substrate. In order to improve the characteristics, a boron-doped p-layer is used under the n-channel layer. Both FET's show clear drain characteristics for the first time using CVD-grown β-SiC.Keywords
This publication has 0 references indexed in Scilit: