Observation of two in-plane epitaxial states in YBa2Cu3O7−δ films on yttria-stabilized ZrO2
- 13 May 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (19) , 2168-2170
- https://doi.org/10.1063/1.104995
Abstract
We demonstrate that two distinctly different in‐plane epitaxial states of c‐axis oriented YBa2Cu3O7−δ (YBCO) films on (100) yttria‐stabilized ZrO2 (YSZ) single‐crystal substrates can be produced independently, namely, YBCO [100]//YSZ [100] or YBCO [100]//YSZ [110]. Both in‐plane epitaxial relationships can be modeled by matching YBCO and YSZ oxygen sublattices at the film‐substrate interface. High critical current densities (Jc), ∼5×105–1×106 A/cm2 at 77 K, are achieved when ≳90 vol % of either orientation is present. Jc can be degraded nearly four orders of magnitude in films with mixed orientation.Keywords
This publication has 18 references indexed in Scilit:
- Resistive loss at 10 GHz in c-axis-aligned in-situ-grown filmsPhysical Review B, 1991
- Reaction patterning of YBa2Cu3O7−δ thin films on SiApplied Physics Letters, 1990
- Growth of YBa2Cu3O7 thin films on MgO: The effect of substrate preparationApplied Physics Letters, 1990
- Low noise YBa2Cu3O7−δ grain boundary junction dc SQUIDsApplied Physics Letters, 1990
- YBa2Cu3O7−δ superconducting films with low microwave surface resistance over large areasApplied Physics Letters, 1990
- Microwave surface resistance of epitaxial YBa2Cu3O7 thin films on sapphireApplied Physics Letters, 1990
- Superconducting transport properties of grain boundaries in bicrystalsPhysical Review B, 1990
- Orientation Dependence of Grain-Boundary Critical Currents inBicrystalsPhysical Review Letters, 1988
- Penetration depths of high T c films measured by two-coil mutual inductancesApplied Physics Letters, 1988
- Quantum interference devices made from superconducting oxide thin filmsApplied Physics Letters, 1987