Ultrahigh-speed AlGaAs/GaAs ballistic collection transistors using carbon as p -type dopant

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Abstract
Ultrahigh-speed performance is demonstrated in AIGaAs/GaAs ballistic collection transistors with a launcher (L-BCTs) grown by MOCVD using carbon (C)-doping of both a uniform base layer and a p+-layer for a potential cliff in the collector layer. A selfalignment fabrication technology characterised by a base-metal overlaid structure results in superior high-frequency performances of 100 and 144GHz for ftand fmax respectively.