Statistical modelling of time dependent oxide breakdown distributions
- 1 September 1993
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 33 (11) , 1665-1677
- https://doi.org/10.1016/0026-2714(93)90079-e
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Bimodal lifetime distributions of dielectrics for integrated circuitsQuality and Reliability Engineering International, 1991
- Accelerated testing of time-dependent breakdown of SiO2IEEE Electron Device Letters, 1987
- On tunneling in metal-oxide-silicon structuresJournal of Applied Physics, 1982