Formation and growth of black spots in organic light-emitting diodes

Abstract
We report electroluminescence (EL) degradation studies of thin‐film organic light‐emitting diodes under ambient conditions. Bilayer organic ITO/TPD/Alq3/Mg/Ag devices were studied via EL and photoluminescence (PL) microscopy. In situ imaging of device luminescing areas and measurement of sample luminance were performed, allowing for a detailed study of black spot formation and luminance reduction under constant voltage stress conditions. Post‐stress devices were further characterized using PL microscopy, and it was found that black spots result from delamination of the metal at the Alq3/Mg interface initiated by pinholes on the cathode, caused by substrate defects.