Double-junction amorphous silicon-based solar cells with 11% stable efficiency
- 14 December 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (24) , 2917-2919
- https://doi.org/10.1063/1.108021
Abstract
The performance of dual‐band gap, double‐junction amorphous silicon alloy‐based solar cells in which the component cells have different degrees of current mismatch has been studied under annealed and light‐soaked conditions. Using a profiled band gap amorphous silicon‐germanium alloy in the bottom cell, a stabilized active‐area efficiency of 11.16% has been achieved.Keywords
This publication has 2 references indexed in Scilit:
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- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977