Quenching of the total luminescence ofHo3+inHoLiF4crystals
- 1 February 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 51 (6) , 3344-3352
- https://doi.org/10.1103/physrevb.51.3344
Abstract
The luminescent-channel efficiency for ions in crystals was measured and compared with the case of as a low-concentration dopant (1.71%) in crystals of . The , luminescent transitions are strongly quenched by two possible cross-relaxation processes: one with almost zero mismatch energy, favoring the population of the , , and levels, and the other, a laser transition in the mid-infrared region. Also seen was a strong decrease of the total luminescence by approximately 6.6 times in crystals from 10 to 300 K. This quenching effect was attributed to an energy transfer from the excited and levels to traps present in the crystal.
Keywords
This publication has 9 references indexed in Scilit:
- Me2+‐OH− Complex Control in Lithium FluoridePhysica Status Solidi (b), 1991
- Improved pulse operation of Ho(III) in YAG and YLF codoped by Tm(III) and Er(III)Journal of the Less Common Metals, 1989
- A 2 mu m holmium laserIEEE Journal of Quantum Electronics, 1988
- Energetics of the protonation of CO: Implications for the observation of HOC+ in dense interstellar cloudsThe Journal of Chemical Physics, 1984
- Pulsed Ho:YAG oscillator and amplifierIEEE Journal of Quantum Electronics, 1981
- Optical transitions of Pr3+ and Er3+ ions in LiYF4Journal of Luminescence, 1980
- Low temperature thermal conductivity of OH− and OD−-doped LIF single crystalsJournal of Physics and Chemistry of Solids, 1980
- Ho laser with 50-W output and 6.5% slope efficiencyJournal of Applied Physics, 1975
- High-Efficiency Room-Temperature 2.06-μm Laser Using Sensitized Ho3+:YLFApplied Physics Letters, 1971