The atomic arrangement in the 1×1 structure of a silicon−ordered monolayer on Mo{001}

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Abstract
The reaction of a clean Mo{001} surface with Si vapor was studied with low−energy electron diffraction (LEED) and Auger electron spectroscopy (AES). For an apparent coverage of one monolayer of Si atoms, the symmetry and the periodicity of the surface structure are the same as for the clean surface; this structure is therefore conventionally designated Mo{001} 1×1−Si. An analysis of the intensities of the diffracted beams reveals that the Si atoms are adsorbed in the fourfold coordinated pyramidal hollows formed by four adjacent Mo atoms on the {001} surface. The distance between the plane of adsorbed Si atoms and that of the top layer of Mo atoms is 1.16±0.1 Å.