Carbonization-induced SiC micropipe formation in crystalline Si
- 4 September 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (10) , 1453-1455
- https://doi.org/10.1063/1.114492
Abstract
The defect structure of Si substrates at their β-SiC/Si interfaces generated in a chemical vapor deposition (CVD) process by carbonization with C2H4 has been investigated in detail by transmission electron microscopy (TEM) using differently prepared cross section and planar specimens. A new category of defects of minute size and high area density has been found and identified as SiC micropipes formed by Si outdiffusion and simultaneous ingrowth of SiC. A model of self-adjusting micropipe formation is proposed.Keywords
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