The effect of channel hot electron stress on a.c. device characteristics of MOSFETs

This publication has 4 references indexed in Scilit:

• Effect of hot-electron stress on low frequency MOSFET noise
  IEEE Electron Device Letters, 1984
• A reliable approach to charge-pumping measurements in MOS transistors
  IEEE Transactions on Electron Devices, 1984
• Interface states in MOSFETs due to hot-electron injection determined by the charge pumping technique
  Electronics Letters, 1981
• Model for 1/f; noise in MOS transistors biased in the linear region
  Solid-State Electronics, 1980