Germanium and Silicon Film Growth by Low-Energy Ion Beam Deposition
- 1 February 1977
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 16 (2) , 245-251
- https://doi.org/10.1143/jjap.16.245
Abstract
The design and characteristics of a low-energy ion beam deposition system are discussed. In the system, metal ions with an energy of 100 eV are deposited onto the substrate at a current density of 4–5 µA/cm2. Germanium single crystalline films are deposited on germanium (111) and silicon (111) substrate at substrate temperatures above 300°C. In the case of deposition below 200°C, films are found to be amorphous and re-crystallized by annealing above 300°C. When the ion energy over 500 eV is used, sputtering of the substrate is dominant and deposition is not observed for Ge+ ions and the silicon substrate combination. The results demonstrated the feasibility of growing thin film by low-energy ion beam deposition.Keywords
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