ELECTRONIC SPUTTERING : ANGULAR AND CHARGE-STATE DEPENDENCE OF THE YIELD VIA SUPERPOSITION
- 1 February 1989
- journal article
- Published by EDP Sciences in Le Journal de Physique Colloques
- Vol. 50 (C2) , C2-251
- https://doi.org/10.1051/jphyscol:1989240
Abstract
Fast-ion induced electronic sputtering (desorption) is treated using the superposition of effects from point sources along the track of an incident ion. Comparison is made with the angular dependence of the sputtering yield for low-temperature condensed-gas solids and the effect of charge-state equilibration is considered. It is shown that the measured angular dependence can be explained without free parameters if energy (momentum) transport occurs even over small distances. However, neither the incident - angle dependence nor the charge-state dependence place severe constraints on the ejection mechanismKeywords
This publication has 0 references indexed in Scilit: